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Characteristics of Tin Oxide Thin Films Deposited by PE-ALD

PE-ALD를 이용한 SnO2 Thin Film의 특성

  • Park Yongju (Department of Advanced Materials Engineering, Chosun University) ;
  • Lee Woonyoung (Department of chemistry, Chonnam National University) ;
  • Choi Yongkook (Department of chemistry, Chonnam National University) ;
  • Lee Hyunkyu (Department of Advanced Materials Engineering, Chosun University) ;
  • Park Jinseong (Department of Advanced Materials Engineering, Chosun University)
  • Published : 2004.12.01

Abstract

Tin dioxide ($SnO_2$) thin films were prepared on Si(100) substrate by PE-ALD using the $DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$ Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature $50^{\circ}C$ and the substrate temperature $300^{\circ}C$ shows lower roughness than those $40/60^{\circ}C$ source and $200/400^{\circ}C$ substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of $SnO_2$ thin film showed a constant region in the range of $200^{\circ}C\;to\;500^{\circ}C$. The thin films deposited for 200 cycle show a better sensitivity to CO gas.

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