Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization of Composite Silicide Obtained from NiCo-Alloy Films

코발트/니켈 합금박막으로부터 형성된 복합실리사이드

  • Song Ohsung (Department of Materials Science and Engineering, The University of Seoul) ;
  • Cheong Seonghwee (Department of Materials Science and Engineering, The University of Seoul) ;
  • Kim Dugjoong (Department of Materials Science and Engineering, The University of Seoul)
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 정성희 (서울시립대학교 신소재공학과) ;
  • 김득중 (서울시립대학교 신소재공학과)
  • Published : 2004.12.01
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Abstract

NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.

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References

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