Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Fabrication of Triode Type Field Emission Device Using Carbon Nanotubes Synthesized by Thermal Chemical Vapor Deposition

열 화학 기상 증착법을 이용한 삼극관 구조의 탄소 나노 튜브 전계 방출 소자의 제조

  • Yu W. J. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Cho Y. S. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Choi G. S. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim D. J. (Department of Materials Science and Engineering, Chungnam National University)
  • 유완준 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 조유석 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 최규석 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 김도진 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실)
  • Published : 2004.08.01
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Abstract

We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.

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