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Effect of Heat Treatment of the Diffusion Barrier for Bus Electrode of Plasma Display by Electroless Ni-B Deposition

무전해 Ni-B 도금을 이용한 플라즈마 디스플레이 버스 전극용 확산방지막의 열처리 영향

  • Choi Jae Woong (Div. of Materials Science and Engineering, Hanyang Univ.) ;
  • Hwang Gil Ho (Div. of Materials Science and Engineering, Hanyang Univ.) ;
  • Hong Seok Jun (Div. of Materials Science and Engineering, Hanyang Univ.) ;
  • Kang Sung Goon (Div. of Materials Science and Engineering, Hanyang Univ.)
  • Published : 2004.08.01

Abstract

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

Keywords

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