Novel Technique for Splay to Bend Transition in a ${\pi}$ Cell

  • Jhun, Chul-Gyu (Department of Electronics Engineering, Pusan National University) ;
  • Lee, Jong-Lac (Department of Electronics Engineering, Pusan National University) ;
  • Kang, Sang-Ho (Department of Electronics Engineering, Pusan National University) ;
  • Lee, Seong-Ryong (Department of Electronics Engineering, Pusan National University) ;
  • Kim, Jae-Chang (Department of Electronics Engineering, Pusan National University) ;
  • Yoon, Tae-Hoon (Department of Electronics Engineering, Pusan National University)
  • Published : 2004.06.24

Abstract

A ${\pi}$ cell is initially in splay state. Before driving a ${\pi}$ cell, transition from splay to bend state is always necessary which originates from nucleation. We propose a novel technique to make bend transition fast and effectively by forming transition cores around the pixels with the technique of multi-domain alignment, where domain boundaries play a crucial role in splay to bend transition. This noble technique enables the splay to bend transition to occur within less than 2 seconds with a low applied voltage.

Keywords

References

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