Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Magnetotransport of Be-doped GaMnAs

GaMnAs의 Be 병행 도핑에 의한 자기 수송 특성 연구

  • Im W. S. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Yoon T. S. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Yu F. C. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Gao C. X. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Kim D. J. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Ibm Y. E. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Kim H. J. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University) ;
  • Kim C. S. (Korea Research Institute of Standards and Science) ;
  • Kim C. O. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
  • 임완순 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 윤대식 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 우부성 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 고존서 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 김도진 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 임영언 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 김효진 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터) ;
  • 김창수 (한국표준과학연구원) ;
  • 김종오 (충남대학교 재료공학과 및 고기능성 자성 재료 연구센터)
  • Published : 2005.01.01
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Abstract

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

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References

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