Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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The Structure, Surface Morphology and Electrical Properties of ZrO2 Metal-insulator-metal Capacitors

ZrO2 MIM 캐패시터의 구조, 표면 형상 및 전기적 특성

  • Kim Dae Kyu (Department of Materials Science and Engineering) ;
  • Lee Chongmu (Department of Materials Science and Engineering)
  • 김대규 (인하대학교 공과대학 신소재공학부) ;
  • 이종무 (인하대학교 공과대학 신소재공학부)
  • Published : 2005.02.01
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Abstract

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

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References

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