Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Oxygen Pressure on the Electrical Properties of ZnO Transparent Thin Films on Flexible Teflon Substrate

산소압력이 테프론 휨성 기판위에 형성된 ZRO 투명박막의 전기적 특성에 미치는 영향

  • Suh Kwang Jong (Department of Electrical and Electronics Engineering, Toyohashi University of Technology) ;
  • Chang Ho Jung (Department of Electronics Engineering, Dankook University)
  • 서광종 (도요하시기술과학대학교 전기전자공학과) ;
  • 장호정 (단국대학교 공학대학 전자공학과)
  • Published : 2005.04.01
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Abstract

We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{\circ}\;to\;0.34^{\circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{\circ}C$ was about $5\times10^{-4}\Omega{\cdot}cm\;and\;20cm^2/V{\cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.

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References

  1. D. G Thomas, J. Phys. Chem. Solids, 15, 86 (1960) https://doi.org/10.1016/0022-3697(60)90104-9
  2. Y. S. Park, C. W. Litton, T. C. Collins and D.C. Reynolds, Phys. Rev, 143, 512 (1966) https://doi.org/10.1103/PhysRev.143.512
  3. Z. K. Tang, P. Yu, G. K. L. Wong, M. Kawasaki, A. Ohtomo. H. Koinuma and Y. Segawa, Solid State Commun. 103, 459 (1997) https://doi.org/10.1016/S0038-1098(97)00216-0
  4. Y.Chen, D. M. Bangnail, H. Koh, K. Park, K. Hiraga, Z. Zhu and T. Yao, J. Appl. Phys. 84, 3912 (1998) https://doi.org/10.1063/1.368595
  5. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, G. Cantwell and W. C. Harsch, Phys. Rev. B 60, 857 (1999) https://doi.org/10.1103/PhysRevE.60.857
  6. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata and T. Kawai, J. Appl. Phys, 93(3), 1624 (2003) https://doi.org/10.1063/1.1534627
  7. A. V. Singh, R. M. Mehra, N. Buthrath, A. Wakahara and A. Yoshida, J. Appl. Phys, 90(11), 5661 (2001) https://doi.org/10.1063/1.1415544
  8. H. Kim, C. M. Gilmore, Appl. Phys. Lett., 76(3), 259 (2000) https://doi.org/10.1063/1.125740
  9. A. Van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, J. Phys. Chem.B, 104, 1715 (2000) https://doi.org/10.1021/jp993327z