Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

원자층 증착법으로 성장한 HfO2 박막의 제조

  • Kim Hie-Chul (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Kim Min-Wan (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Kim Hyung-Su (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Kim Hyug-Jong (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Sohn Woo-Keun (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Jeong Bong-Kyo (LG. Philips Displays, Design Department) ;
  • Kim Suk-Whan (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Lee Sang-Woo (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology) ;
  • Choi Byung-Ho (School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology)
  • 김희철 (금오공과대학교 신소재시스템공학부) ;
  • 김민완 (금오공과대학교 신소재시스템공학부) ;
  • 김형수 (금오공과대학교 신소재시스템공학부) ;
  • 김혁종 (금오공과대학교 신소재시스템공학부) ;
  • 손우근 (금오공과대학교 신소재시스템공학부) ;
  • 정봉교 (LG. Philips Displays 설계실) ;
  • 김석환 (금오공과대학교 신소재시스템공학부) ;
  • 이상우 (금오공과대학교 신소재시스템공학부) ;
  • 최병호 (금오공과대학교 신소재시스템공학부)
  • Published : 2005.04.01
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Abstract

The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of $175-350^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors. A self-limiting growth of $0.6\AA/cycle$ was achieved at the substrate temperature of $240-280^{\circ}C$. The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at $300^{\circ}C$ was almost stoichiometric. Electrical measurements performed on $MoW/HfO_2$(20 nm)/Si MOS structures exhibited high dielectric constant$(\~17)$ and a remarkably low leakage current density of at an applied field of $1.5-6.2\times10^{-7}A/cm^2$ MV/cm, probably due to the stoichiometry of the films.

Keywords

References

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