Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Property and Microstructure Evolution of Nickel Silicides for Poly-silicon Gates

게이트를 상정한 니켈 실리사이드 박막의 물성과 미세구조 변화

  • Jung Youngsoon (Department of materials science and engineering, University of Seoul) ;
  • Song Ohsung (Department of materials science and engineering, University of Seoul) ;
  • Kim Sangyoeb (Department of materials science and engineering, University of Seoul) ;
  • Choi Yongyun (Inter-university Semiconductor Research Center, Seoul National University) ;
  • Kim Chongjun (Inter-university Semiconductor Research Center, Seoul National University)
  • 정영순 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 김상엽 (서울시립대학교 신소재공학과) ;
  • 최용윤 (서울대학교 반도체공동연구소) ;
  • 김종준 (서울대학교 반도체공동연구소)
  • Published : 2005.05.01
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Abstract

We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.

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References

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