Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Fabrication of Nanostructures on InP(100) Surface with Irradiation of Low Energy and High Flux Ion Beams

고출력 저에너지 이온빔을 이용한 InP(100) 표면의 나노 패턴형성

  • Park Jong Yong (Thin Film Materials Research Center, KIST) ;
  • Choi Hyoung Wook (Thin Film Materials Research Center, KIST) ;
  • Ermakov Y. (Moscow Institute of Radioengineering, electronics, and Automatics (MIREA)) ;
  • Jung Yeon Sik (Thin Film Materials Research Center, KIST) ;
  • Choi Won-Kook (Thin Film Materials Research Center, KIST)
  • 박종용 (한국과학기술연구원, 박막재료연구센터) ;
  • 최형욱 (한국과학기술연구원, 박막재료연구센터) ;
  • ;
  • 정연식 (한국과학기술연구원, 박막재료연구센터) ;
  • 최원국 (한국과학기술연구원, 박막재료연구센터)
  • Published : 2005.06.01
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Abstract

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

Keywords

References

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