Transactions of the Korean Society of Mechanical Engineers A (대한기계학회논문집A)

The Korean Society of Mechanical Engineers (대한기계학회)
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A Study on Frictional Characteristics and Polishing Result of SiO2 Slurry in CMP

CMP시 SiO2 슬러리의 마찰 특성과 연마결과에 관한 연구

  • 이현섭 (부산대학교 정밀기계공학과) ;
  • 박범영 (부산대학교 정밀기계공학과) ;
  • 서헌덕 (부산대학교 정밀기계공학과) ;
  • 정재우 (부산대학교 정밀기계공학과) ;
  • 정석훈 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 정밀정형 및 금형가공 연구소)
  • Published : 2005.07.01
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Abstract

The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.

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References

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Cited by

  1. Effect of contact angle between retaining ring and polishing pad on material removal uniformity in CMP process vol.14, pp.9, 2013, https://doi.org/10.1007/s12541-013-0204-x