한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권7호
  • /
  • Pages.652-655
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  • 2005
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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사파이어 기판 위에 증착된 ZnO 박막의 기판온도와 산소 가스량에 따른 특성

Effect of Variation of Substrate Temperature and Oxygen Gas Flow of the ZnO Thin Films Deposited on Sapphire

  • 김재홍 (인하대학교 전기공학과) ;
  • 이천 (인하대학교 전기공학과)
  • 발행 : 2005.07.01
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초록

ZnO thin films on (001) $Al_2O_3$ substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters, such as oxygen gas flow, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~900$ sccm. We investigated the structural and optical properties of ZnO thin films using X-ray diffraction(XRD) and photoluminescence(PL).

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참고문헌

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