Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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High density plasma etching of single crystalline $La_3Ga_5SiO_{14}$ for wide band high temperature SAW filter devices

광대역 고온용 SAW filter 소자용 $La_3Ga_5SiO_{14}$ 단결정의 고밀도 플라즈마 식각

  • Cho, Hyun (Department of Materials Engineering, Miryang National University)
  • 조현 (밀양대학교 신소재공학부)
  • Published : 2005.12.31
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Abstract

Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline $La_3Ga_5SiO_{14}$ wafer have been examined in $Cl_2/Ar$ inductively coupled plasma (ICP) discharges. Maximum etch rate ${\sim}1600{\AA}/min$ was achieved either at relatively high source power $({\sim}1000W)$ or high $Cl_2$ content conditions in $Cl_2/Ar$ discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching.

[ $Cl_2/Ar$ ] 유도결합 플라즈마(ICP)내의 플라즈마 조성, 이온 flux 및 이온 에너지가 $La_3Ga_5SiO_{14}$ 단결정 wafer의 식각속도, 표면 양상 및 화학량론적 조성에 미치는 영향을 조사하였다. 비교적 높은 ICP source power$({\sim}1000W)$ 또는 높은 $Cl_2$ gas 유량 비율 조건으로부터 최고 약 $1600{\AA}/min$의 실용적이고 조절이 용이한 식각속도를 확보하였다. 식각된 $La_3Ga_5SiO_{14}$ 표면은 식각 이전과 비슷하거나 더 낮은 표면 조도 특성을 나타내었으며 식각 공정 전, 후 표면의 화학량론적 조성에 있어서의 변화는 없는 것으로 조사되었다.

Keywords

References

  1. Y. Xu, 'Ferroelectric materials and their applications' (North Holland, Amsterdam, 1991) p.3
  2. S.J. Kan, M. Sakamoto, Y. Okano and T. Fukuda, '$LiNbO_3$ single crystal growth by the continuous charging Czochralski method with Li/Nb ratio control', J. Crystal Growth 119 (1992) 215 https://doi.org/10.1016/0022-0248(92)90673-7
  3. N. Iyi, K. Kitamura and S. Kimura, 'Comparative study of defect structures in lithium niobate with different compositions', J. Solid State Chem. 101 (1992) 340 https://doi.org/10.1016/0022-4596(92)90189-3
  4. M.F. Dubovik, I.A. Andreyev and Yu. S. Shamly, 'Langasite ($La_3Ga_5SiO_{14}$) an optical piezoelectric: Growth and properties', IEEE Int'l, Freq. Control Symp. (1994) 43
  5. K. Shimamura, H. Takeda, T. Kohno and T. Fukuda, 'Growth and characterization of lanthanum gallium silicate $La_3Ga_5SiO_{14}$ single crystals for piezoelectric applications', J. Crystal Growth 163 (1996) 388 https://doi.org/10.1016/0022-0248(95)01002-5
  6. K. Hirade, 'Present and future trend of cellular mobile communications', Processing on Int'l Symp. on SAW Devices for Mobile Communication (1992)
  7. M. Honal, R. Fachberger, T. Holzheu, E. Riha, E. Born, P. Pongratz and A. Bausewein, 'Langasite surface acoustic wave sensors for high temperatures', IEEE/EIA International Frequency Control Symposium (2000) 113
  8. J.M. Steigerwald, R. Zirpoli, S.P. Murarka, D. Price and R.J. Gutmann, 'Pattern geometry effects in the chemical-mechanical polishing of inlaid copper structures', J. Electrochem. Soc. 141 (1994) 2842
  9. S.H. Li and R.O. Miller, 'Chemical-mechanical polishing in Si processing, semiconductors and semimetals' Vol. 63 (Academic Press, New York, 2000) p.24
  10. C.S. Lee and C.H. Han, 'A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP): application to lateral field emission device (FED)', Sensors and Actuators A 97-98 (2002) 739
  11. S. Laffey, M. Hendrickson and J.R. Vig, 'Polishing and etching langasite and quartz crystals', IEEE Int'l. Freq. Control Symp. (1994) 245
  12. Y. Ogita, K. Kobayashi and H. Daio, 'Photoconductivity characterization of silicon wafer mirror-polishing subsurface damage related to gate oxide integrity', J. Crystal Growth 210 (2000) 36
  13. S.H. Li and R.O. Miller, 'Semiconductors and semimetals', Vol. 63 (Academic Press, New York, 2000) p.73
  14. D.C. Hays, P. Leerungnawarat, S.J. Pearton, G Archibald and R.C. Smythe, 'Surface morphology and removal rate for dry- and wet-etched novel resonator materials', Appl. Surf. Sci. 165 (2000) 135
  15. H. Cho, 'Effects of pH level and slurry particle size on the chemical mechanical planarization of langasite crystal wafer', J. Kor. Assoc. Crystal Growth 15 (2005) 34
  16. O.A. Popov, 'High Density Plasma Sources' (Noyes Publications, Park Ridge, NJ 1995) p.113