Polymer Optical Microring Resonator Using Nanoimprint Technique

나노 임프린트 기술을 이용한 폴리머 링 광공진기

  • Kim, Do-Hwan (Department of Electrnic Engineering, Kwangwoon University) ;
  • Im, Jung-Gyu (Department of Electrnic Engineering, Kwangwoon University) ;
  • Lee, Sang-Shin (Department of Electrnic Engineering, Kwangwoon University) ;
  • Ahn, Seh-Won (Devices and Materials Lab., LG Electronics Institute) ;
  • Lee, Ki-Dong (Devices and Materials Lab., LG Electronics Institute)
  • 김도환 (광운대학교 전자공학과) ;
  • 임정규 (광운대학교 전자공학과) ;
  • 이상신 (광운대학교 전자공학과) ;
  • 안세원 (LG 전자기술원 소자재료연구소) ;
  • 이기동 (LG 전자기술원 소자재료연구소)
  • Published : 2005.08.01


A polymer optical microring resonator, which is laterally coupled to a straight bus waveguide, has been proposed and demonstrated using a nanoimprint technique. The propagation loss of the ring waveguide and the optical power coupling between the ring and bus waveguides was calculated by using a beam propagation method, then the dependence of the device performance on them was investigated using a transfer matrix method. We have especially introduced an imprint stamp incorporating a smoothing buffer layer made of a silicon nitride thin film. This layer played an efficient role in improving the sidewall roughness of the waveguide pattern engraved on the stamp and thus reducing the scattering loss. As a result the overall Q factor of the resonator was greatly increased. Also it reduced the gap between the ring and bus waveguides effectively to enhance the coupling between them, without relying on the direct writing method based on an e-beam writer. As for the achieved device performance at the wavelength of 1550 nm, the quality factor, the extinction ratio, and the free spectral range were ~103800, ~11 dB, and 1.16 m, respectively.

본 논문에서는 나노 임프린트 기술을 이용한 폴리머 링 광공진기를 제안하고 구현하였다. 공진기 역할을 하는 링 도파로에서의 전파손실과 링 및 버스 도파로 간의 광파워 결합계수를 빔전파방법을 도입하여 계산하였으며, 또한 전달 매트릭스 방법을 도입하여 이들이 소자에 미치는 영향을 분석하고 소자를 설계하였다. 특히, smoothing buffor layer를 갖는 임프린트용 스탬프를 도입하여 다음과 같은 성과를 얻을 수 있었다. 먼저 식각공정으로 얻어진 스탬프 상의 도파로 패턴의 측면 거칠기를 링 도파로의 산란손실을 개선함으로써 Q값을 획기적으로 향상시켰다. 또한, 결합영역에서 버스와 링 도파로 간의 간격을 기존 lithography 공정에서는 불가능하였던 $0.2{\mu}m$정도까지 효과적으로 줄이고 제어함으로써 링과 도파로 간의 광파워 결합을 정밀하게 조절할 수 있게 되었다. 제작된 소자의 성능을 살펴보면, 링 반경이 $200{\mu}m$인 경우에 대해 1550 nm 파장 대역에서 Q값은 ~103800이고, 소멸비는 ~11 dB, free spectral range는 1.16 nm였다.


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