Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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The Effect of the Heat Treatment of the ZrO2 Buffer Layer and SBT Thin Film on Interfacial Conditions and Ferroelectric Properties of the SrBi2Ta2O9/ZrO2/Si Structure

ZrO2 완충층과 SBT 박막의 열처리 과정이 SrBi2Ta2O9/ZrO2/Si 구조의 계면 상태 및 강유전 특성에 미치는 영향

  • Oh, Young-Hun (School of Materials Science and Engineering, Busan National University) ;
  • Park, Chul-Ho (School of Materials Science and Engineering, Busan National University) ;
  • Son, Young-Guk (School of Materials Science and Engineering, Busan National University)
  • 오영훈 (부산대학교 재료공학부) ;
  • 박철호 (부산대학교 재료공학부) ;
  • 손영구 (부산대학교 재료공학부)
  • Published : 2005.09.01
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Abstract

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

Keywords

References

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