ETRI Journal

  • 제27권5호
  • /
  • Pages.579-584
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  • 2005
  • /
  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

A Single Transistor-Level Direct-Conversion Mixer for Low-Voltage Low-Power Multi-band Radios

  • 투고 : 2005.01.12
  • 발행 : 2005.10.31
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초록

A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.

키워드

참고문헌

  1. International Technology Roadmap for Semiconductors, Overall Roadmap Technology Characteristics Semiconductor Industry Association
  2. Multi-band OFDM Physical Layer Proposal, IEEE 802.15-03/267r2 Batra, Anuj
  3. ETRI J. v.26 no.3 A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems Hyun, Seok-Bong;Tak, Geum-Young;Kim, Sun-He;Kim, Byung-Jo;Park, Seong-Su
  4. Proc. ASIC 2003 v.2 A 1.5 V 900 MHz CMOS Current Folded-Mirror Mixer Cheng, W.C.;Chan, C.F.;Choy, C.S.;Pun, K.P.
  5. Proc. ICECS v.3 A 900MHz Low Voltage Low Power Highly Linear Mixer for Direct-Conversion Receivers Yang, M.S.;Kim, H.R.;Lee, S.G.
  6. IEEE J. of Solid-State Circuits v.32 no.7 Low Voltage Performance of a Microwave CMOS Gilbert Cel Mixer Sullivan, P.J.;Xavier, B.A.;Ku, W.H.