Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effects of RF Power, Substrate Temperature and Gas Flow Ratio on the Mechanical Properties of WCx Films Deposited by Reactive Sputtering

반응성 스퍼터링법에서의 RF전력, 기판온도 및 가스유량비가 WCx막의 기계적 특성에 끼치는 효과

  • Park Y. K. (Dept. of Advanced Materials Sci. & Eng.) ;
  • Lee C. M. (Dept. of Advanced Materials Sci. & Eng.)
  • 박연규 (인하대학교 신소재공학부) ;
  • 이종무 (인하대학교 신소재공학부)
  • Published : 2005.10.01
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Abstract

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

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