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Phase Transformation by Cu Diffusion of Electrolessly Deposited Ni-B Diffusion Barrier for Cu Interconnect

Cu 미세 배선을 위한 무전해 Ni-B 확산 방지막의 Cu 확산에 따른 상변태 거동

  • Choi J. W. (Div. of Materials Science and Engineering, hanyang Univ.) ;
  • Hwang G. H. (Div. of Materials Science and Engineering, hanyang Univ.) ;
  • Song J. H. (Div. of Materials Science and Engineering, hanyang Univ.) ;
  • Kang S. G. (Div. of Materials Science and Engineering, hanyang Univ.)
  • Published : 2005.11.01

Abstract

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

Keywords

References

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