Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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CMP Properties of Oxide Film with Various Pad Conditioning Temperatures

CMP 패드 컨디셔닝 온도에 따른 산화막의 연마특성

  • 최권우 (조선대학교 전기공학과) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 서용진 (대불대학교 전기전자공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2005.04.01
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Abstract

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

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References

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