KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Amorphization of Silicon by 250 keV Electron Irradiation and Hydrogen Annealing

  • Jo Jung-Yol (Department of Electronics Engineering, Ajou University)
  • Published : 2005.02.01
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Abstract

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

Keywords

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