반도체 습식 세정 공정 중 상온의 초순수와 염기성 수용액 내에서 오존의 용해도 최적화

The Optimization of Ozone Solubility and Half Life Time in Ultra Pure Water and Alkaline Solution on Semiconductor Wet Cleaning Process

  • 이상호 (한양대학교 재료화학공학부) ;
  • 이승호 (한양대학교 재료화학공학부) ;
  • 김규채 (한양대학교 재료화학공학부) ;
  • 권태영 (한양대학교 재료화학공학부) ;
  • 박진구 (한양대학교 재료화학공학부) ;
  • 배소익 ((주)LG실트론 기술연구소) ;
  • 이건호 ((주)LG실트론 기술연구소) ;
  • 김인정 ((주)LG실트론 기술연구소)
  • Lee Sang-Ho (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Lee Seung-Ho (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Kim Kyu-Chae (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Kwon Tae-Young (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Park Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Bae So-Ik (Advanced Technology Team, R&D Center, LG Siltron) ;
  • Lee Gun-Ho (Advanced Technology Team, R&D Center, LG Siltron) ;
  • Kim In-Jung (Advanced Technology Team, R&D Center, LG Siltron)
  • 발행 : 2005.12.01

초록

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

키워드