Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth of silicon nitride whiskers using tailored pores

제어된 기공을 이용한 질화규소 휘스커의 성장

  • 김창삼 (한국과학기술연구원, 복합기능세라믹스 연구센터) ;
  • 한경섭 (한국과학기술연구원, 복합기능세라믹스 연구센터) ;
  • 김신우 (호서대학교 신소재공학과)
  • Published : 2005.04.30
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Abstract

In this study a new growing method of silicon nitride whiskers in the inside of large pores made intentionally during the sintering was conducted. Pore size, pore vol%, and nitrogen pressure were used as experimental variables. Silicon nitride whiskers were well grown in the inside of pores with low pore vol% range from 14 to 27 but not grown with high pore vol% such as 39 and 50. On the other hand, pore size and nitrogen pressure did not have any influence on the whisker growth. Therefore the most important factor to grow silicon nitride whisker in the inside of large pores during sintering was to make pores isolated or closed.

본 연구에서는 질화규소의 소결 과정에서 인위적으로 형성시킨 기공내부에 질화규소의 휘스커를 성장시키는 새로운 방법을 시도하였다. 실험변수로는 기공의 크기, 기공률 및 질소압력을 사용하였다. 기공률이 14vol%와 27vol%로 낮은 경우에는 질화규소 휘스커가 기공내부에 잘 성장되었으나 39vol%와 50vol%로 기공률이 증가된 경우에는 휘스커가 거의 성장하지 않았다. 한편 기공의 크기와 질소압력은 기공내부에 질화규소 휘스커의 성장에 거의 영향을 주지 않았고, 소결과정에 기공 내에 휘스커를 성장시키는 중요한 조건은 고립된 형태의 닫힌 기공을 유지하는 것임을 알았다.

Keywords

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