Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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A Low Noise Phase Locked Loop with Cain-boosting Charge Pump

Cain-boosting 전하펌프를 이용한 저잡음 위상고정루프

  • 최영식 (부경대학교 전자컴퓨터정보통신공학부) ;
  • 한대현 (동의대학교 전자공학과)
  • Published : 2005.04.01
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Abstract

In this paper, a gain-boosting charge pump(CP) and a latch type voltage controlled oscillato.(VCO) with voltage controlled resistor(VCR) were proposed. The gain-boosting CP achieves good .current matching of less than 11$mu$V voltage difference between 43$mu$V and 32$mu$V in its output range from 0.8V to 2.3V. The VCO with VCR shows good linear characteristics over the range from 1V to 3V. The fabricated VCO exhibits -108dBc/Hz phase noise at a 100kHz and is comparable to that of the integrated LC-tank oscillator. The phase locked loop(PLL) with new circuits was simulated in a 0.35$mu$m CMOS process and showed 150$mu$s locking time.

본 논문에서는 gain-boosting 회로를 이용하여 전류 미스매치를 줄일 수 있는 전하펌프와 전압제어 저항기를 사용하여 선형성이 우수한 래치 구조의 전압제어발생기를 제안하여 위상고정루프를 설계하였다. Cain-boosting 전하펌프를 사용한 위상고정루프는 루프필터 출력 전압 구간에서 11$mu$V(최대 43$mu$V, 최소 32$mu$V)의 전압 흔들림 차이를 나타내었다. 전압제어저항기를 이용한 전압제어발진기는 입력전압 동작 구간에서 우수한 선형성을 나타내었다. 또한 제작된 전압제어발진기의 위상 잡음 특성은 -1084Bc/Hz(a)100kHz이며 CMOS 공정으로 만들어진 LC 전압제어발진기와 비슷한 성능을 가진다. 0.35$mu$m CMOS 공정으로 시뮬레이션 하였으며 록킹 시간은 150$mu$s이다.

Keywords

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