Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Fabrication of Nd-Substituted Bi4Ti3O12 Thin Films by Metal Organic Chemical Vapor Deposition and Their Ferroelectrical Characterization

  • Kim, Hyoeng-Ki (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Dong-Kyun (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Byong-Ho (Department of Materials Science and Engineering, Korea University)
  • Published : 2005.04.01
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Abstract

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

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References

  1. N. Nagel and I. Kunishima, ' Key Technologies for High Density FeRAM Applications,' Int. Ferroelec., 48 127-37 (2002) https://doi.org/10.1080/10584580215459
  2. M. Yamaguchi and T. Nagatomo, ' Preparation and Properties of $Bi_{4}Ti_{3}O_{12}$ Thin Films Grown at Low Substrate Temperatures,' Thin Solid Films, 348 294-98 (1999) https://doi.org/10.1016/S0040-6090(99)00025-5
  3. B. S. Kang, J. G. Yoon, T. K. Song, Y. W. So, S. Seo, and T. W. Noh, ' Retention Characteristics of $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ Films Deposited by Using Pulsed Laser Deposition,' Ferroelec., 271 63-8 (2002) https://doi.org/10.1080/00150190211527
  4. J. H. Lee, K. B. Kim, and G. E. Jang, ' Electrical Properties of $Bi_{4x}La_{x}Ti_{3}O_{12}$ Thin Films,' Ferroelec., 271 161-66 (2002) https://doi.org/10.1080/713716215
  5. M. Hida and K. Kurihara, ' Characterization of $(Bi,La)_{4}Ti_{3}O_{12}$ (BLT) Thin Films Fabricated by Low Temperature Sol-Gel Synthesis,' Ferroelec., 271 223-27 (2002) https://doi.org/10.1080/713716217
  6. T. Watanabe, A. Saiki, K. Saito, and H. Funakubo, ' Film Thickness Dependence of Ferroelectric Properties of c-Axis-oriented Epitaxial $Bi_4Ti_3O_{12}$ Thin Films Prepared by Meta-lorganic Chemical Vapor Deposition,' J. Appl. Phys., 89 [7] 3934-38 (2001) https://doi.org/10.1063/1.1352566
  7. R. Ramesh, ' Thin Film Ferroelectric Materials and Devices,' Kluwer Academic, Dordrecht 199-204 (1997)
  8. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, ' Lanthanum-Substituted Bismuth Titanate for Use in Non-Volatile Memories,' Nature(Lond.), 401 682-84 (1999) https://doi.org/10.1038/44352
  9. U. Chon, H. M. Jang, M. G. Kim, and C. H. Chang, ' Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories,' Phys. Rev. Lett., 89 [8] 087601 (2002) https://doi.org/10.1103/PhysRevLett.89.087601
  10. K. T. Kim, C. I. Kim, D. H. Kang, and I. W. Shim, ' The Effect of Eu Substitution on the Ferroelectric Properties of $Bi_{4}Ti_{3}O_{12}$ Thin Films Prepared by Metal-Organic Decomposition,' Thin Solid Fims, 422 230-34 (2002) https://doi.org/10.1016/S0040-6090(02)00981-1
  11. Y. Ding, J. S. Liu, H. X. Qin, J. S. Zhu, and T. N. Wang, ' Why Lanthanum-Substituted Bismuth Titanate Becomes Fatigue Free in a Ferroelectric Capacitor with Platinum Electrodes,' Appl. Phys. Lett., American Institute of Physics, 78 [26] 4175-77 (2001) https://doi.org/10.1063/1.1381038