Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Dry Etching Characteristics of LiNbO3 Single Crystal for Optical Waveguide Fabrication

광도파로 제작을 위한 단결정 LiNbO3 건식 식각 특성

  • Park, Woo-Jung (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Yang, Woo-Seok (Optical Telecommunication Components Laboratory, Korea Electronics Technology Institute) ;
  • Lee, Han-Young (Optical Telecommunication Components Laboratory, Korea Electronics Technology Institute) ;
  • Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
  • 박우정 (성균관대학교 신소재공학과) ;
  • 양우석 (전자부품연구원 광부품센터) ;
  • 이한영 (전자부품연구원 광부품센터) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2005.04.01
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Abstract

The etching characteristics of a $LiNbO_{3}$ optical waveguide structure have been investigated using neutral loop discharge plasma with the mixture of $C_{3}F_{8}$ and Ar and the bias power parameters. The etching rate and profile angle of optical waveguide with etching parameters were evaluated by scanning electron microscopy. Also, the etching RMS roughness was evaluated by atomic force microscopy. From the results of optimum etching conditions are the $C_{3}F_{8}$ gas flow ratio of 0.2 and the bias power of 300 W.

$LiNbO_{3}$ optical waveguide 구조를 neutral loop discharge plasma 방법으로 식각시 As과 $C\_{3}F_{8}$가 혼합된 가스 유량에 따른 식각속도와 표면조도 값의 특성을 관찰하였다. 식각 후 식각속도와 식각단면은 scanning electron microscopy로 비교 분석하였으며, 표면조도는 atomic force microscopy로 측정하였다. Ar과 $C_{3}F_{8}$가 혼합된 가스 유량비를 각각 0.1-0.5로 증가시킴에 따라 식각속도와 표면조도는 0.2에서 가장 높게 나타났으며, bias power를 증가함에 따라 300W에서 가장 우수한 식각속도와 가장 평탄한 표면 형상을 얻을 수 있었다.

Keywords

References

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