Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Hysteresis Characteristics in Low Temperature Poly-Si Thin Film Transistors

  • Chung, Hoon-Ju (School of Electronic Engineering, Kumoh National Institute of Tech-nology) ;
  • Kim, Dae-Hwan (P-Si Process Integration Team, LG. Philips LCD Co., Ltd) ;
  • Kim, Byeong-Koo (P-Si Process Integration Team, LG. Philips LCD Co., Ltd)
  • Published : 2005.12.21
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Abstract

The dependence of hysteresis characteristics in low temperature poly-Si (LTPS) thin film transistors (TFTs) on the gate-source voltage (Vgs) or the drain-source voltage (Vds) bias is investigated and discussed. The hysteresis levels in both p-type and n-type LTPS TFTs are independent of Vds bias but increase as the sweep range of Vgs increases. It has been found that the hysteresis in both p-type and n-type LTPS TFTs originated from charge trapping and de-trapping in the channel region rather than at the source/drain edges.

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References

  1. N. C. van der Vaart, H. Lifka, F. Budzelaar, J. Rubingh, J. Hoppenbrouwers, J. F. Dijksman, R. Verbeek, R. van Woudenberg, F. J. Vossen, M. Hiddink, J. Rosink, T. Bernards, and A. Giraldo, N. D. Young, D. A. Fish, M. J. Childs, W. A. Steer, D. Lee, and D. S. George, in SID '04 Digest (2004), p. 1284
  2. R. Dawson, Z. Shen, D. A. Furst, S. Connor, J. Hsu, M. G. Kane, R. G. Stewart, A. Ipri, C. N. King, P. J. Green, R. T. Flegal, S. Pearson,W. A. Barrow, E. Dickley, K. Ping, S. Robinson, C. W. Tang, S. Van Slyke, F. Chen, J. Shi, J. C. Sturm, and M. H. Lu, in SID '98 Digest (1998), p. 11
  3. T. Sasaoka, M. Sekiya, A. Yumoto, J. Yamada, T. Hirano, Y. Iwase, T. Yamada, T. Ishibashi, T. Mori, M. Asano, S. Tamura, and T. Urabe, in SID '01 Digest (2001), p. 384.
  4. B. K. Kim, O. Kim, H. J. Chung, J. W. Chang, and Y. M. Ha, Jpn. J. Appl. Phys. 43, L4892, (2004)
  5. Y. Tsividis, Operation and Modeling of the MOS Transistor (McGRAW-Hill, Singapore, 1999) 2nd Ed., p. 56
  6. K. Chatty, S. Banerjee, T. P. Chow, and R. J. Gutmann, IEEE Electron Device Lett. 23, 330, (2002)
  7. K. N. Manjularani, V. R. Rao, and J. Vasi, IEEE Trans. Electron Devices 50, 973, (2003)