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Change of Refractive Index and Residual Stresses of Ta2O5 Thin Film Prepared by Dual Ion Beam Sputtering Deposition as the Substrate Temperature and Assist ion Beam Energy

이중 이온빔으로 제작한 Ta2O5 박막의 기판 온도 및 보조 이온빔 에너지에 따른 굴절률과 판류응력의 변화

  • Yeon, Seok-Gyu (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, Yong-Tak (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, Hwek-Yung (Optical Telecommunication Research Center, Korea Electronics Technology Institute) ;
  • Kim, Myoung-Jin (Optical Telecommunication Research Center, Korea Electronics Technology Institute) ;
  • Lee, Hyung-Man (Optical Telecommunication Research Center, Korea Electronics Technology Institute) ;
  • Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
  • 윤석규 (성균관대학교 신소재공학과) ;
  • 김용탁 (성균관대학교 신소재공학과) ;
  • 김회경 (전자부품연구원 광부품연구센터) ;
  • 김명진 (전자부품연구원 광부품연구센터) ;
  • 이형만 (전자부품연구원 광부품연구센터) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2005.01.01

Abstract

The optical properties and intrinsic stress of $Ta_{2}O_{5}$ thin films deposited by Dual ion-Beam Sputtering: (DIBS) and Single ion-Beam Sputtering (SIBS) were studied as a function of the substrate temperature and assist ion beam voltage. The refractive index showed the maximum value (n = 2.144) at $150^{circ}C$ in the SIBS process. When the substrate temperature has above $150^{circ}C$ in the SIBS process the refractive index decreased. In the DIBS process, the increase of the substrate temperature affected the increase of the refractive index at a maximum value (n = 2.1117, at $200^{circ}C$). The low temperature process $(<100^{circ}C)$ can greatly reduce residual stress with the assist ion gun, but the high temperature process was unaffected. As the assist ion beam voltage increase from 250 to 350 V the refractive index increased to 2.185. However, the refractive index was decreased at the range of 350-650 V, As the assist ion beam voltage increased, the stress of the deposited film decreased to 0.1834 GPa at 650 V.

이중 이온빔 스퍼터링(Dual ion-Beam Sputtering, DIBS)과 단일 이온빔 스피터링(Single ion-Beam Sputtering, SIBS)을 사용하여 기판의 온도와 보조 이온빔 에너지 변화에 따라 $Ta_{2}O_{5}$ 박막의 광학적 특성과 박막에 존재하는 응력의 변화에 과해 관찰하였다. SIBS 방법에 의해 증착되어진 박막의 굴절률은 150^{circ}C$에서 최고 2.144를 나타내었으며, $150^{circ}C$ 이상에서는 감소하였다. DIBS 방법에 의해 증착된 732린 박막은 기판의 온도가 증가함에 따라 $200^{circ}C$에서 최고 2.117의 굴절률을 나타내었다. $100^{circ}C$ 미만의 저온 DIBS 증착은 박막에 존재하는 응력을 낮추었으나 100^{circ}C 이상의 고온 증착시에는 박막에 존재하는 응력이 켰다. 보조 이온빔 어시스트 한 경우, 보조 이온빔 에너지가 250V에서 350V로 증가함에 따라 증착된 T놀달 박막의 굴절률은 2.185로 증가하였으나, $350\~650V$인 구간에서는 굴절률이 감소하는 경향을 나타냈다. 또한, 보조 이온빔 에너지가 증가함으로써 박막에 존재하는 응력이 감소하여 650 V에서 0.1834 GPa를 나타내었다.

Keywords

References

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