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Oxidation Behavior of Si3N4 by the Nitrided Pressureless Sintering

Nitrided Pressureless Sintering에 의해 제조된 Si3N4의 산화거동

  • Han, In-Sub (Energy Materials Research Center, Korea Institute of Energy Research) ;
  • Cheon, Sung-Ho (Energy Materials Research Center, Korea Institute of Energy Research) ;
  • Jung, Yong-Hee (Energy Materials Research Center, Korea Institute of Energy Research) ;
  • Seo, Doo-Won (Energy Materials Research Center, Korea Institute of Energy Research) ;
  • Lee, Shi-Woo (Energy Materials Research Center, Korea Institute of Energy Research) ;
  • Hong, Kee-Soeg (Energy Materials Research Center, Korea Institute of Energy Research) ;
  • Woo, Sang-Kuk (Energy Materials Research Center, Korea Institute of Energy Research)
  • 한인성 (한국에너지 기술연구원 에너지 재료연구센터) ;
  • 천승호 (한국에너지 기술연구원 에너지 재료연구센터) ;
  • 정용희 (한국에너지 기술연구원 에너지 재료연구센터) ;
  • 서두원 (한국에너지 기술연구원 에너지 재료연구센터) ;
  • 이시우 (한국에너지 기술연구원 에너지 재료연구센터) ;
  • 홍기석 (한국에너지 기술연구원 에너지 재료연구센터) ;
  • 우상국 (한국에너지 기술연구원 에너지 재료연구센터)
  • Published : 2005.01.01

Abstract

Oxidtion behavior of $Si_{3}N_{4}$ ceramics with the different porosity by the Nitrided Pressureless Sintering (NPS) were investigated in pure oxygen gas atmosphere at 1000 to $1300^{circ}C$. The thickness of formed oxide film on the surface of silicon nitride ceramics was increased with oxidation time and temperature. The oxide film thickness of 5A5Y5Si and 5A5Y10Si specimens for 100 h at 1300^{circ}C$ was about 10 $\mu$m and 20 $\mu$m, respectively. The oxidation of 5A5Y5Si and 5A5Y10Si specimens follows the parabolic behavior with an apparent activation energy of 215 kJ/mol and 104 kJ/mol, respectively. The flexural strength of 5A5Y5Si specimens after oxidation test for 500 h at 1300^{circ}C were maintained as-received value of 500 ma. On the other hand, that of 5A5Y10Si specimens were decreased about 100 MPa in as-received value.

질화상압동시소결(NPS) 공정에 의해 제조된 기공율이 다른 질화규소 소결체에 대해 $1300^{circ}C$ 순산소 가스분위기에서 산화거동을 조사하였다. 질화규소 세라믹스 표면에 형성된 산화층의 두께는 산화 시간과 온도에 따라 증가되었으며, $1300^{circ}C$에서 100시간 산화시킨 5A5Y5Si와 5A5Y10Si 시편의 산화층 두께는 각각 10$\mu$m와 20$\mu$m이었다. 5A5YSi와 5A5Y10Si 시편의 산화는 각각 215kJ/mol과 104kJ/mol의 활성화 에너지를 갖고 포물선적 거동을 나타내었다. $1300^{circ}C$에서 500시간 산화시킨 후, 5A5Y5Si 시편에 대해 꺾임 강도를 측정한 결과, 초기의 약 500MPa값을 유지하고 있었으며, 반면 5A5Y10Si의 경우에는 초기의 값에서 약 100MPa의 강도저하를 나타내고 있었다.

Keywords

References

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