The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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PZTN Sintered at the Low Temperature by the Glass Phase Transient Processing

글래스 천이 공정에 의해 저온소결된 PZTN

  • Published : 2005.03.01
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Abstract

This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{\circ}C$ and $1050^{\circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{\circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.

Keywords

References

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