Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Electrical Properties of Sol-Gel Derived Ferroelectric Bi3.35Sm0.65Ti3O12 Thin Films

  • Kang, Dong-Kyun (Department of Materials Science and Engineering, Korea University) ;
  • Cho, Tae-Jin (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Byong-Ho (Department of Materials Science and Engineering, Korea University)
  • Published : 2005.03.01
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Abstract

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.

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References

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