Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Single Polysilicon EEPROM Cell and High-voltage Devices using a 0.25 μ Standard CMOS

0.25 μm 표준 CMOS 로직 공정을 이용한 Single Polysilicon EEPROM 셀 및 고전압소자

  • 신윤수 (충북대학교 반도체공학과) ;
  • 나기열 (충북대학교 반도체공학과) ;
  • 김영식 (충북대학교 반도체공학과) ;
  • 김영석 (충북대학교 반도체공학과)
  • Published : 2006.11.01
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Abstract

For low-cost embedded EEPROM, in this paper, single polysilicon EEPROM and n-channel high-voltage LDMOST device are developed in a $0.25{\mu}m$ standard CMOS logic process. Using these devices developed, the EEPROM chip is fabricated. The fabricated EEPROM chip is composed of 1 Kbit single polysilicon EEPROM away and high voltage driver circuits. The program and erase characteristics of the fabricated EEPROM chip are evaluated using 'STA-EL421C'. The fabricated n-channel high-voltage LDMOST device operation voltage is over 10 V and threshold voltage window between program and erase states of the memory cell is about 2.0 V.

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References

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