DOI QR코드

DOI QR Code

Effects of Codoping with Fluorine on the Properties of ZnO Thin Films

  • Heo, Young-Woo (Department of Inorganic Materials Engineering, Kyungpook National University) ;
  • Norton, D.P. (Department of Materials Science and Engineering, University of Florida)
  • Published : 2006.11.30

Abstract

We report on the effects of co-doping with fluorine on properties of ZnO thin films grown by pulsed-laser deposition. The transport characteristics of Ag-F and Li-F codoped ZnO films were determined by Hall-effect measurements at room temperature. Ag-F codoped ZnO films showed n-type semiconducting behaviors. An ambiguous carrier type was observed in Li-F codoped ZnO films grown at a temperature of 500$^{\circ}C$ with the oxygen pressures of 20 and 200 mTorr. The qualities of the codoped ZnO films were studied by X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy, and photoluminescence.

Keywords

References

  1. C. M. Frans and Pol, Van De, 'Thin-Film ZnO-Properties and Applications,' Ceram. Bull., 69 1959 (1990)
  2. H. Nishiyama, N. Saito, H. Chou, K. Sato, and Y. Inoue, 'Effects of Surface Acoustic Waves on Adsorptive Proper- ties of ZnO and NiO Thin Films. Deposited on Ferroelectric Substrates,' Surf. Sci., 433-435 525-28 (1999) https://doi.org/10.1016/S0039-6028(99)00045-X
  3. Y. P. Wang, W. I. Lee, and T. Y. Tseng, 'Degradation Phenomena of Multilayer ZnO--Glass Varistors Studied by Deep Level Transient Spectroscopy,' Appl. Phys. Lett., 69 1807 (1996) https://doi.org/10.1063/1.117493
  4. W. P. Kang and C. K. Kim, 'Catalyst-Adsorptive Oxidesemiconductor Gas Sensors,' Sensors and Actuators B, 13-14 682 (1993)
  5. F. Paraguay D. M. Miki-Yoshida, J. Morales, J. Solis, and W. L. Estrada, 'Influence of Al, In, Cu, Fe, and Sn Dopants on the Response of Thin Film ZnO Gas Sensor to Ethanol Vapor,' Thin Solid Films, 373 137 (2000)
  6. C. R. Wuethrich, C. A. P. Muller, G. R. Fox, and H. G. Limberger, 'All Fiber Acousto-Optic Modulator Using ZnO Piezoelectric Actuators,' Sensors and Actuators A, 66 114 (1998) https://doi.org/10.1016/S0924-4247(97)01755-X
  7. S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, 'Effect of Hydrogen Plasma Treatment on Transparent Conducting Oxides,' Appl. Phys. Lett., 49 394 (1986) https://doi.org/10.1063/1.97598
  8. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, 'Transparent Thin Film Transistors using ZnO as an Active Channel Layer and their Electrical Properties,' J. Appl. Phys., 93 1624 (2003) https://doi.org/10.1063/1.1534627
  9. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes Jr., 'Transparent ZnO Thin-Film Transistor Fabricated by RF Magnetron Sputtering,' Appl. Phys. Lett., 82 1117 (2003) https://doi.org/10.1063/1.1553997
  10. J. H. Chang, M. W. Cho, H. M. Wang, H. Wenisch, T. Hanada, T. Yao, K. Sato, and O. Oda, 'Structural and Optical Properties of High-Quality ZnTe Homoepitaxial Layers,' Appl. Phys. Lett., 77 1256 (2000) https://doi.org/10.1063/1.1290155
  11. S. B. Zhang, S. H. Wei, and A. Zunger, 'Intrinsic n-Type Versus p-Type Doping Asymmetry and the Defect Physics of ZnO,' Phys. Rev. B, 63 075205 (2001) https://doi.org/10.1103/PhysRevB.63.075205
  12. C. H. Park, S. B. Zhang, and S. H. Wei, 'Origin of p-Type Doping Difficulty in ZnO: The Impurity Perspective,' Phys. Rev. B, 66 073202 (2002) https://doi.org/10.1103/PhysRevB.66.073202
  13. D. J. Dai, 'Predictor of p-Type Doping in II-VI Semiconductors,' Phys. Rev. B, 59 15181 (1999) https://doi.org/10.1103/PhysRevB.59.15181
  14. T. Aoki, D. C. Look, and Y. Hatanaka, 'ZnO Diode Fabricated by Excimer-Laser Doping,' Appl. Phys. Lett., 76 3257 (2000) https://doi.org/10.1063/1.126599
  15. K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, 'Realization of p-Type ZnO Thin Films via Phosphorus Doping and Thermal Activation of the Dopant,' Appl. Phys. Lett., 83 63 (2003) https://doi.org/10.1063/1.1591064
  16. Y. W. Heo, Y. W. Kwon, Y. J. Li, J. Pearton, and D. P. Norton, 'p-Type Behavior in Phosphorus-Doped (Zn,Mg)O Device Structures,' Appl. Phys. Lett., 84 3474 (2004) https://doi.org/10.1063/1.1737795
  17. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, 'Characterization of Homoepitaxial p-Type ZnO Grown by Molecular Beam Epitaxy,' Appl. Phys. Lett., 81 1830 (2002) https://doi.org/10.1063/1.1504875
  18. C.-C. Lin, S.-Y. Chen, S.-Y. Cheng, and H.-Y. Lee, 'Properties of Nitrogen-Implanted p-Type ZnO Films Grown on $Si_3N_4/Si$ by Radio-Frequency Magnetron Sputtering,' Appl. Phys. Lett., 84 5040 (2004) https://doi.org/10.1063/1.1763640
  19. S. Limpijumnong, S. B. Zhang, S.-H. Wei, and C. H. Park, 'Doping by Largesize-Mismatched Impurities: The Microscopic Origin of Arsenic-or Antimony-Doped p-Type Zinc Oxide,' Phys. Rev. Lett., 92 155504 (2004) https://doi.org/10.1103/PhysRevLett.92.155504
  20. D. C. Look and B. Claflin, 'P-Type Doping and Devices Based on ZnO,' Phys. Status Solid A, 241 624 (2004) https://doi.org/10.1002/pssb.200304271
  21. Y. R. Ryu, T. S. Lee, J. H. Leem, and H. W. White, 'Fabrication of Homostructural ZnO p--n Junctions and Ohmic Contacts to Arsenic-Doped p-Type ZnO,' Appl. Phys. Lett., 83 4032 (2003) https://doi.org/10.1063/1.1625787
  22. T. Ohshima, T. Ikegami, K. Ebihara, J. Asmussen, and R. K. Thareja, 'Synthesis of p-Type ZnO Thin Films Using Co-Doping Techniques Based on KrF Excimer Laser Deposition,' Thin Solid Films, 435 49 (2003) https://doi.org/10.1016/S0040-6090(03)00383-3
  23. X. Li, Y. Yan, T. Gessert, C. DeHart, C. L. Perkins, D. Young, and T. J. Coutts, 'p-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas,' Electrochem. Solid-State Lett., 6 C56 (2003) https://doi.org/10.1149/1.1554292
  24. K.-H. Bang, D.-K. Hwang, M.-C. Park, Y.-D. Ko, I. Yun, and J.-M. Myoung, 'Formation of p-Type ZnO Film on InP Substrate by Phosphor Doping,' Appl. Surf. Sci., 210 177 (2003) https://doi.org/10.1016/S0169-4332(03)00151-X
  25. A. Zunger, 'Practical Doping Principles,' Appl. Phys. Lett., 83 57 (2003) https://doi.org/10.1063/1.1584074
  26. T. Yamamoto and H. Katayama-Yoshida, 'Physics and Control of Valence States in ZnO by Codoping Method,' Physica B, 302-303 155 (2001) https://doi.org/10.1016/S0378-4371(01)00448-4
  27. F. Zhuge, L. P. Zhu, Z. Z. Ye, D. W. Ma, J. G. Lu, J. Y. Huang, F. Z. Wang, Z. G. Ji, and S. B. Zhang, 'ZnO p-n Homojunctions and Ohmic Contacts to Al-N Co-Doped p- Type ZnO,' Appl. Phys. Lett., 87 092103 (2005) https://doi.org/10.1063/1.2012521