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A Study on the Thermal Stability of Cu/Ti(Ta)/NiSi Contacts

Cu/Ti(Ta)/NiSi 접촉의 열적안정성에 관한 연구

  • You, Jung-Joo (Department of Electronic Materials Engineering, The University of Suwon) ;
  • Bae, Kyoo-Sik (Department of Electronic Materials Engineering, The University of Suwon)
  • 유정주 (수원대학교 전자재료공학과) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 2006.10.27

Abstract

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

Keywords

References

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