Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Ohmic Contact Characteristics of p-InGaAs with Near-Noble Transition Metals of Pt and Pd

준귀금속 전이원소, Pt, Pd를 이용한 p-InGaAs의 오믹 접촉저항 특성 연구

  • Park, Young-San (Department of Physics and Institute of Optoelectronics, Chonnam National University) ;
  • Ryu, Sang-Wan (Department of Physics and Institute of Optoelectronics, Chonnam National University) ;
  • Yu, Jun-Sang (OE Solutions) ;
  • Kim, Hyo-Jin (Korea Photonics Technology Institute) ;
  • Kim, Sun-Hun (Korea Photonics Technology Institute) ;
  • Kim, Jin-Hyeok (Department of Materials Science and Engineering, Chonnam National University)
  • Published : 2006.10.27
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Abstract

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

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References

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