Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Direct Bonding of GOI Wafers with High Annealing Temperatures

높은 열처리 온도를 갖는 GOI 웨이퍼의 직접접합

  • Byun, Young-Tae (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Kim, Sun-Ho (Photonics Research Center, Korea Institute of Science and Technology)
  • 변영태 (한국과학기술연구원 광기술연구센터) ;
  • 김선호 (한국과학기술연구원 광기술연구센터)
  • Published : 2006.10.27
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Abstract

A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/$SiO_2$/Si wafers with 0.5-$\mu$m-thick PECVD oxides were annealed from $100^{\circ}C\;to\;600^{\circ}C$. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of $400{\sim}500^{\circ}C$. The bonded wafers were not separated up to $600^{\circ}C$. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.

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