DOI QR코드

DOI QR Code

Excellent Magnetic Properties of Co53FE22Hf10O15 Thin Films

  • Tho, L.V. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Lee, K.E. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, C.G. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, C.G. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Cho, W.S. (ReCAMM, Chungnam National University)
  • Published : 2006.12.31

Abstract

Nanocrystalline CoFeHfO thin films have been fabricated by RF sputtering method. It is shown that the CoFeHfO thin films possess not only high electrical resistivity but also large saturation magnetization and anisotropy field. Among the composition investigated, $Co_{53}FE_{22}Hf_{10}O_{15}$ thin film is observed to exhibit good soft magnetic properties: coercivity ($H_{c}$) of 0.18 Oe; anisotropy fild ($H_{k}$) of 49.92 Oe; saturation magnetization ($4{\Pi}M_{s}$) of 15.5 kG. The frequency response of permeability of the film is excellent. The excellent magnetic properties of this film in addition of an extremely high electrical resistivity (r) of $185\;{\mu}cm$ make it ideal for uses in high-frequency applications of micromagnetic devices. It is the formation of a peculiar microstructure that resulted in the superior properties of this film.

Keywords

References

  1. A. M. Crawford, D. Gardner, and S. X. Wang, IEEE Trans. Magn. 38, 3168 (2002) https://doi.org/10.1109/TMAG.2002.802403
  2. M. Xu, T. M. Liakopoulos, and C. H. Ahn, IEEE Trans. Magn. 34, 1369 (1998) https://doi.org/10.1109/20.706551
  3. N. Kataoka, M. Hosokawa, A. Inoue, and T. Masumoto, Jpn. J. Appl. Phys. 28, L462 (1989) https://doi.org/10.1143/JJAP.28.L462
  4. N. Kataoka, K. Sumiyama, and Y. Nakamura, Trans. Jpn. Inst. Met. 27, 823 (1986) https://doi.org/10.2320/matertrans1960.27.823
  5. Xiaomin Liu and Giovanni Zangari, Liyong Shen, J. Appl. Phys. 87, 9. 2000
  6. Liangliang Li, Ankur M. Crawford, Shan X. Wang, and Ann F. Marshall, J. Appl. Phys. 97, 10F907. 2005 https://doi.org/10.1063/1.1853238