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The Plasma Modification of Polycarbonate and Polyethersulphone Substrates for Ta2O5 Thin Film Deposition

Ta2O5 박막증착에서 플라즈마 전 처리를 통한 Polycarbonate와 Polyethersulphone 기판의 표면 개질

  • Kang, Sam-Mook (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Yoon, Seok-Gyu (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Jung, Won-Suk (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
  • 강삼묵 (성균관대학교 신소재공학과) ;
  • 윤석규 (성균관대학교 신소재공학과) ;
  • 정원석 (성균관대학교 신소재공학과) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2006.01.01

Abstract

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

Keywords

References

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