High Isolation and Linearity MMIC SPDT Switch for Dual Band Wireless LAN Applications

이중대역 무선랜 응용을 위한 높은 격리도와 선형성을 갖는 MMIC SPDT 스위치

  • Published : 2006.01.01

Abstract

This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

본 논문에서는 이중대역 무선랜 응용을 위한 SPDT(single-pole double-throw) 스위치를 설계 및 제작하였다. 높은 격리도와 송신단의 선형성을 개선하기 위해 적층-게이트(stacked-gate)를 이용하는 비대칭구조를 제안하였다. 제안한 SPDT 스위치의 트랜지스터의 게이트-폭과 제어전압 그리고 적층-게이트의 개수는 모의실험을 통해 최적의 값으로 설계되었고, 500mS/mm의 Gmmax와 150GHz의 fmax를 갖는 $0.25{\mu}m$ GaAs pHEMT 공정을 이용하여 제작하였다. 설계된 스위치는 $DC\~6GHz$ 대역에서 0.9dB 이하의 삽입손실과 송신시 40dB 이상의 격리도와 수신시 25dB 이상의 격리도를 나타내었고, -3/0V 제어전압으로 23dBm의 입력 PldB 를 보였다. 제작된 SPDT 스위치는 $1.8mm{\times}1.8mm$의 면적을 갖는다.

Keywords

References

  1. H. Tosaka, T. Fujii, K. Miyakoshi, K. Ikenaka, and M. Takahashi, 'An Antenna Switch MMIC Using E/D Mode p-HEMT for GSM/DCS/ PCS/WCDMA Bands Applications,' IEEE RFIC Symp, Dig., pp, 519-522, June 2003
  2. A. Gopinnth, and J. B. Rankin, 'GaAs FET RF switches,' IEEE Trans. Electron Devices, Vol. ED-32, no. 7, pp.1272- 1278, 1985 https://doi.org/10.1109/T-ED.1985.22111
  3. Y. Tkachenko, L. Kapitan, and D. Bartle, 'High-Performance Power PHEMT for Wireless Communication,' European Microwave Conf. Dig., pp. 1041-1045, 1997 https://doi.org/10.1109/EUMA.1997.337934
  4. F. McGrath, C. Varmazis, and R. Pratt, 'Novel High Performance SPDT Power Switches Using Multi-gate FETs, ' IEEE MTT-S, pp.839-842, Oct 1991 https://doi.org/10.1109/MWSYM.1991.147137
  5. M. Masuda, N. Ohbata, H. Ishiuchi, K. Onda, and R. Yamamoto, 'High Power Heterojunction GaAs Switch IC with P-ldB of more than 38dBm for GSM Application,' IEEE GaAs IC Symposium Digest, pp. 229-232, 1998
  6. H. Uda, T. Yamada, T. Sawai, K. Nogawa, and Y. Harada, 'High-Performance GaAs Switch IC's Fabricated Using MESFETs with Two Kinds of Pinch-off Voltage and a Symmetrical Pattern Configuration,' IEEE Journal of Solid-state Circuits,Vol. 29, No.10, pp. 1262-1269, Oct 1994 https://doi.org/10.1109/4.315213
  7. K. Miyatsuji, and D. Ueda, 'A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System,' IEEE Journal of Solid-state Circuits, Vol. 30, No.9, pp. 979-983, Sep 1995 https://doi.org/10.1109/4.406396
  8. Takahiro Ohnakado, Satoshi Yamakawa, etc, 'A 0.8 dB Insertion Loss, 23 dB Isolation, 17.5 dBm Power Handling, 5 GHz Transmit/receiver CMOS Switch,' IEEE RFIC Digest, pp. 229-232, 2003
  9. C. Tinella, J. M. Fournier, D. Belot, and V. Knopik, 'A High Performance CMOS-SOI Antenna Switch for the 2.5-5-GHz Band,' IEEE Journal of Solid-State Circuits, vol. 38, no. 7, pp. 1279-1283, July 2003 https://doi.org/10.1109/JSSC.2003.813289
  10. Z. Gu, D. Johnson, S. Belletete, and D. Fryklund, 'A Low Insertion Loss and High Linearity PHEMT SPDT and SP3T Switch ICs for WLAN 802.l1a/b/g Applications,' IEEE RFIC Symp, Dig., pp, 505-508, 2004
  11. Z. Gu, D. Johnson, S. Belletete, and D. Fryklund, 'A High Power DPDT MMIC Switch for Broadband Wireless Applications,' IEEE RFIC Symp, Dig., pp, 687-690, June 2003
  12. K. Numata, Y. Takahashi, and T. Meda, 'A +2.4/0V Controlled High Power GaAs SPDT Antenna Switch IC for GSM Application,' IEEE RFIC Symp. Dig., pp. 141-144, June 2002
  13. C. Lee, B. Banerjee, and J. Laskar, 'Novel T/R Switch Architectures for MIMO Application,' IEEE MTT-S. Dig., pp.1137-1140, 2004 https://doi.org/10.1109/MWSYM.2004.1339186