In-situ Analysis of Temperatures Effect on Electromigration-induced Diffusion Element in Eutectic SnPb Solder Line

공정조성 SnPb 솔더 라인의 온도에 따른 Electromigration 확산원소의 In-situ 분석

In-situ observation of electromigration in thin film pattern of 63Sn-37Pb solder was performed using a scanning electron microscope system. The 63Sn-37Pb solder had the incubation stage of electromigration for edge movement when the current density of $6.0{\times}10^{4}A/cm^2$ was applied the temperature between $90^{\circ}C\;and\;110^{\circ}C$. The major diffusion elements due to electromigration were Pb and Sn at temperatures of $90-110^{\circ}C\;and\;25-50^{\circ}C$, respectively, while no major diffusion of any element due to electromigration was detected when the test temperature was $70^{\circ}C$. The reason was that both the elements of Sn and Pb were migrated simultaneously under such a stress condition. The existence of the incubation stage was observed due to Pb migration before Sn migration at $90-110^{\circ}C$. Electromigration behavior of 63Sn-37Pb solder had an incubation time in common for edge drift and void nucleation, which seemed to be related the lifetime of flip chip solder bump. Diffusivity with $Z^*$(effective charges number) of Pb and Sn were strongly affect the electromigration-induced major diffusion element in SnPb solder by temperature, respectively.

63Sn-37Pb 솔더의 실시간 electromigration 거동 관찰을 박막형 edge 이동 선형시편과 주사전자현미경을 이용하여 실시하였다. 공정조성 63Sn-37Pb 솔더의 electromigration에 의한 edge 이동 잠복기는 $90{\sim}110^{\circ}C$에서 뚜렷하게 존재하였다. 온도에 따른 electromigration 우선확산원소는 실험온도 $90{\sim}110^{\circ}C$에서 Pb, $25{\sim}50^{\circ}C$에서는 Sn으로 나타났고, $70^{\circ]C$에서는 Sn과 Pb가 거의 동시에 이동하여 우선확산 원소가 관찰되지 않았다. $90{\sim}110^{\circ}C$에서 관찰된 SnPb의 electromigration에 의한 edge 이동 잠복기는 Pb 우선이동에 의해 발생되었다. 이러한 edge 이동 잠복기의 존재는 플립칩 (flip chip) 솔더범프의 수명과 밀접한 관계를 가지는 것으로 보인다. Electromigration에 의해 발생되는 SnPb 솔더의 우선확산원소의 온도 의존성은 Pb와 Sn의 확산계수와 함께 $Z^*$ (전기장내의 유효전하 수)도 크게 영향을 미치는 것으로 생각된다.