Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok (MD Process Development Team, LCD Business Samsung Electronics) ;
  • Park, Sun (MD Process Development Team, LCD Business Samsung Electronics) ;
  • Heo, Seong-Kweon (MD Process Development Team, LCD Business Samsung Electronics) ;
  • You, Chun-Ki (MD Process Development Team, LCD Business Samsung Electronics) ;
  • Min, Hoon-Kee (MD Process Development Team, LCD Business Samsung Electronics) ;
  • Kim, Chi-Woo (MD Process Development Team, LCD Business Samsung Electronics)
  • Published : 2006.09.24
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Abstract

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

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References

  1. R. Watanabe. O. Tomita, 'Active-Matrix LCDs for Mobile Telephones in Japan', Information Display (2003)
  2. R. G Stewart, 'Circuit Design for a-Si AMLCDs with Integrated Drivers'. SID Dig. (1995)