Journal of Mechanical Science and Technology

  • 제20권8호
  • /
  • Pages.1292-1301
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  • 2006
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  • 1738-494X(pISSN)
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  • 1976-3824(eISSN)
대한기계학회 (The Korean Society of Mechanical Engineers)
권호 표지

Three-Temperature Modeling of Carrier-Phonon Interactions in Thin GaAs Film Structures Irradiated by Picosecond Pulse Lasers

  • Lee Seong-Hyuk (School of Mechanical Engineering, Chung-Ang University) ;
  • Lee Jung-Hee (School of Mechanical Engineering, Chung-Ang University) ;
  • Kang Kwan-Gu (Micro Thermal System Research Center, Seoul National University) ;
  • Lee Joon-Sik (School of Mechanical and Aerospace Engineering, Seoul National University)
  • 발행 : 2006.08.01
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초록

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

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참고문헌

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