Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Electrical Properties of the Amorphous BaTi4O9 Thin Films for Metal-Insulator-Metal Capacitors

Metal-Insulator-Metal 캐패시터의 응용을 위한 비정질 BaTi4O9 박막의 전기적 특성

  • Hong, Kyoung-Pyo (Department of Materials Science and Engineering, Korea University) ;
  • Jeong, Young-Hun (Department of Materials Science and Engineering, Korea University) ;
  • Nahm, Sahn (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Hwack-Joo (Division of Advanced Technology, Korea Research Institute of Standard and Science)
  • 홍경표 (고려대학교 신소재공학과) ;
  • 정영훈 (고려대학교 신소재공학과) ;
  • 남산 (고려대학교 신소재공학과) ;
  • 이확주 (한국표준과학연구원 전략기술연구부)
  • Published : 2007.11.27
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Abstract

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

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References

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