한국정보통신학회논문지 (Journal of the Korea Institute of Information and Communication Engineering)

  • 제11권11호
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  • Pages.2090-2094
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  • 2007
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  • 2234-4772(pISSN)
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  • 2288-4165(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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FBAR 소자의 제작기법 및 공진특성

Fabrication Techniques & Resonance Characteristics of FBAR Devices

  • 발행 : 2007.11.30
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초록

박막음향공진기(FBAR) 기술은 현재의 실리콘 공정기술과 높은 집적화 가능성으로 인하여 차세대 RF 필터를 제작할 수 있는 매우 희망적인 기술로 최근에 큰 관심을 불러 일으켜 왔다. RF 필터는 기본적으로 여러 개의 FBAR 소자들을 직렬과 병렬로 연결된 형태로 구성되므로 그 필터의 특성은 각각의 FBAR 소자의 특성에 크게 의존하게 된다. 따라서 우수한 품질의 FBAR 소자를 제작하기 위해서는 우선적으로 소자 및 공정의 최적화 설계가 중요한다. 이러한 최적화 설계는 FBAR 소자 특성을 크게 향상 시킬 수 있게 되고, 궁극적으로 우수한 성능을 가진 FBAR 필터의 구현으로 이어지게 된다. 본 논문에서는, 이러한 FBAR 소자의 공진특성을 더욱 효과적으로 향상시킬 수 있는 방법들에 관한 연구결과를 고찰하고 논의한다.

Film bulk acoustic wave resonator(FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

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참고문헌

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