Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Growth Temperature on the Properties of Hydrogenation Al-doped ZnO Films

기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화

  • Tark, Sung-Ju (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Min-Gu (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Seung-Hoon (Thin Film Materials Research Center, Division of Materials, Korea Institute of Science and Technology) ;
  • Kim, Won-Mok (Thin Film Materials Research Center, Division of Materials, Korea Institute of Science and Technology) ;
  • Lim, Hee-Jin (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Dong-Hwan (Department of Materials Science and Engineering, Korea University)
  • 탁성주 (고려대학교 신소재공학과) ;
  • 강민구 (고려대학교 신소재공학과) ;
  • 이승훈 (한국과학기술연구원 재료연구부 박막재료연구센터) ;
  • 김원목 (한국과학기술연구원 재료연구부 박막재료연구센터) ;
  • 임희진 (고려대학교 신소재공학과) ;
  • 김동환 (고려대학교 신소재공학과)
  • Published : 2007.12.31
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Abstract

This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% $Al_2O_3$). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to $200^{\circ}C$. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% $H_2$ addition at the growth temperature of $150^{\circ}C$, resistivity of $3.21{\times}10^{-4}{\Omega}{\cdot}cm$, mobility of $21.9cm^2/V-s$, electric charge carrier concentration of $9.35{\times}10^{20}cm^{-3}$ was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

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References

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