Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Improvement of Resonance Characteristics by Post-Annealing in FBAR Devices

  • Lee, Jae-Young (School of Engineering, Information and Communications University(ICU)) ;
  • Mai, Linh (School of Engineering, Information and Communications University(ICU)) ;
  • Yoon, Gi-Wan (School of Engineering, Information and Communications University(ICU))
  • Published : 2007.12.30
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Abstract

This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.

Keywords

References

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