JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue) ;
  • Yu, A.B. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue) ;
  • Karim, M.F. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue) ;
  • Tang, M. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue)
  • Published : 2007.09.30
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Abstract

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

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References

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