Modeling and Simulation of Electron-beam Lithography Process for Nano-pattern Designs using ZEP520 Photoresist

ZEP520 포토리지스트를 이용한 나노 패턴 형성을 위한 전자빔 리소그래피 공정 모델링 및 시뮬레이션

  • Son, Myung-Sik (Semiconductor TCAD Laboratory, Department of Electronic Engineering, Sunchon National University)
  • 손명식 (순천대학교 전자공학과 반도체 TCAD 연구실)
  • Published : 2007.09.30


A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.