Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Electrical and Optical Properties of Al-doped ZnO Thin Films

Al-doped ZnO 투명 전도성 박막(TCO)의 전기적 광학적 특성

  • Hong, Youn-Jeong (Dept. of Advanced Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu-Mann (Dept. of Advanced Materials Engineering, Korea University of Technology and Education) ;
  • Kim, In-Woo (AMLCD Division, Samsung Electronics)
  • 홍윤정 (한국기술교육대학교 신소재공학과) ;
  • 이규만 (한국기술교육대학교 신소재공학과) ;
  • 김인우 (삼성전자 AMLCO 사업부)
  • Published : 2007.09.30
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Abstract

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

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