Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth and characteristics of HVPE thick a-plane GaN layers

HVPE 후막 a-plane GaN 결정의 성장과 특성

  • Lee, C.H. (Department of Applied Sciences, Korea Maritime University) ;
  • Hwang, S.L. (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, K.H. (Department of Applied Sciences, Korea Maritime University) ;
  • Jang, K.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Jeon, H.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Ahn, H.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Yang, M. (Department of Applied Sciences, Korea Maritime University) ;
  • Bae, J.S. (Busan Branch, Korea Basic Science Institute) ;
  • Kim, S.W. (Department of Physics, Andong National University) ;
  • Jang, S.H. (Samsung Electro-Mechanical Co., Ltd.) ;
  • Lee, S.M. (Samsung Electro-Mechanical Co., Ltd.) ;
  • Park, G.H. (Samsung Electro-Mechanical Co., Ltd.) ;
  • Koike, M. (Samsung Electro-Mechanical Co., Ltd.)
  • Published : 2007.02.28
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Abstract

The structural and morphological properties of planar, nonpolar (11-20) a-plane GaN layers grown by hydride vapor phase epitaxy on (1-102) r-plan sapphire substrates are characterized. We report on the effect of low temperature ($500/550/600/660^{\circ}C$) AIN buffer layers on the structural properties of HVPE grown a-GaN kayers. and for the comparison, low temperature GaN and InGaN buffer layers are also tried for the growth of a-plane GaN layers. The structural geometry of a-GaN layers is severely affected on the growth condition of low temperature buffer layers. The most planar a-GaN could be obtained with $GaCl_3$ pretreatment at the growth temperature of $820^{\circ}C$.

본 연구에서는 HVPE(hydride vapor phase epitaxy) 방법으로 r-plane 사파이어 기판 위에 무극성의 (11-20) a-plane GaN을 성장하여 구조적인 특성을 관찰하였다. HVPE 방법으로 저온($500/550/600/660^{\circ}C$)에서 성장한 AIN 버퍼층이 고온의 a-GaN에 미치는 영향을 확인하였다. 또한, AIN 버퍼층과의 비교를 위하여 저온에서 성장한 GaN 버퍼층과 InGaN 버퍼층 같은 다양한 버퍼층을 이용하여 a-plane GaN의 성장도 실시하였다. 고온에서 성장된 a-GaN의 구조적 형상은 저온버퍼층의 성장 조건에 크게 영향을 받음을 알 수 있었다. $GaCl_3$ 전 처리를 실시하고 $820^{\circ}C$에서 성장한 경우에 가장 평탄한 표면을 가지는 a-GaN을 얻을 수 있었다.

Keywords

References

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